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SKiiP 21 NAB 12 - SKiiP 21 NAB 12 I Absolute Maximum Ratings
Symbol Inverter VCES VGES IC ICM IF = -IC IFM = -ICM Conditions 1) (Chopper see SKiiP 22 NAB 12) 1200 20 16 / 11 32 / 22 24 / 17 48 / 34 1500 25 700 2400 - 40 . . . + 150 - 40 . . . + 125 2500 V V A A A A V A A A2s C C V Values Units
Theatsink = 25 / 80 C tp < 1 ms; Theatsink = 25 / 80 C Theatsink = 25 / 80 C tp < 1 ms; Theatsink = 25 / 80 C
MiniSKiiP 2 SEMIKRON integrated intelligent Power SKiiP 21 NAB 12 SKiiP 21 NAB 12 I 3) 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter
Case M2
Bridge Rectifier VRRM ID Theatsink = 80 C tp = 10 ms; sin. 180 , Tj = 25 C IFSM tp = 10 ms; sin. 180 , Tj = 25 C I2t Tj Tstg Visol AC, 1 min.
Characteristics
Symbol Conditions 1) IGBT - Inverter IC = 10 A Tj = 25 (125) C VCEsat VCC = 600 V; VGE = 15 V td(on) IC = 10 A; Tj = 125 C tr Rgon = Rgoff = 150 td(off) inductive load tf Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Rthjh IGBT - Chopper * VCEsat IC = 15 A Tj = 25 (125) C VCC = 600 V; VGE = 15 V td(on) IC = 15 A; Tj = 125 C tr Rgon = Rgoff = 82 td(off) inductive load tf Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Rthjh Diode 2) - Inverter & Chopper VF = VEC IF = 15 A Tj = 25 (125) C Tj = 125 C VTO Tj = 125 C rT IF = 15 A, VR = - 600 V IRRM diF/dt = - 400 A/s Qrr VGE = 0 V, Tj = 125 C Eoff per diode Rthjh min. - - - - - - - - - - - - - - - - typ.
max.
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V 2,7(3,3) 3,2(3,9) ns 110 55 ns 100 50 ns 570 380 ns 120 80 mJ - 2,7 nF - 0,53 K/W 1,8 -
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Units
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UL recognized file no. E63532
* *
V 2,5(3,1) 3,0(3,7) ns 110 55 ns 90 45 ns 600 400 ns 100 70 mJ - 4,0 nF - 1,0 K/W 1,4 - V 2,0(1,8) 2,5(2,3) V 1,2 1,0 m 73 53 A - 16 C - 2,7 mJ - 0,6 K/W 1,7 - 1,2 - - 1,6 V K/W 2,5 Nm
specification of shunts and temperature sensor see part A common characteristics see page B 16 - 4 Theatsink = 25 C, unless otherwise specified CAL = Controlled Axial Lifetime Technology (soft and fast recovery) With integrated AC shunts 1% 22 m
1) 2)
- - - - - - - - -
3)
Rcs(ac)
Diode - Rectifier VF IF = 35 A, Tj = 25 C per diode Rthjh Temperature Sensor T = 25 / 100 C RTS
1000 / 1670
Mechanical Data 2 - case to heatsink, SI Units M1 M2 Case mechanical outline see page B 16 - 7 * For diagrams of the Chopper please refer to SKiiP 22 NAB 12 (c) by SEMIKRON 0698
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B 16 - 51
Fig. 1 Typ. output characteristic, tp = 80 s; 25 C Tj = 125 C VCE = 600 V VGE = 15 V RG = 150
Fig. 2 Typ. output characteristic, tp = 80 s; 125 C Tj = 125 C VCE = 600 V VGE = 15 V IC = 10 A
Fig. 3 Turn-on /-off energy = f (IC) ICpuls = 10 A
Fig. 4 Turn-on /-off energy = f (RG) VGE = 0 V f = 1 MHz
Fig. 5 Typ. gate charge characteristic B 16 - 52
Fig. 6 Typ. capacitances vs. V CE 0698 (c) by SEMIKRON
MiniSKiiP 1200 V
ICop / IC 1.2
Mini1207
Tj = 150 C VGE = 15 V
1.0
0.8
0.6
0.4
0.2
0 0 25 50 75 100 125 150 Th [C]
Fig. 7 Rated current of the IGBT ICop / IC = f (Th)
ICpuls/IC 2,5
Mini1209
Tj = 150 C VGE = 15 V
ICsc/ICN 12
Mini1210
2
10
Tj = 150 C VGE = 15 V tsc = 10 s Lext < 25 nH
8
1,5
6
1
4
Note: *Allowed numbers of short ci cuit:<1000 r *Time between short circuit:>1s
0,5
2
0 0 500 1000 1500 VCE [V]
0 0 500 1000 1500
VCE [V]
Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT
Fig. 10 Safe operating area at short circuit of the IGBT
Fig. 11 Typ. freewheeling diode forward characteristic B 16 - 4
Fig. 12 Forward characteristic of the input bridge diode 0698 (c) by SEMIKRON
MiniSKiiP 2
SKiiP 22 NAB 06 ... SKiiP 21 NAB 12... Circuit Case M2 Layout and connections for the customer's printed circuit board Note: The shunts are available only by option I

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